منابع مشابه
Cygni , a second overtone field RR Lyrae star
We present the first (as of February, 1999) UBV and uvby photometric measurements for the short period variable star V2109 Cyg discovered by the Hipparcos satellite and classified as a field RRc variable. We have obtained new times of maxima and the period change has been studied. We determined the fundamental physical parameters using the geometric distance of the star and the most recent synt...
متن کاملA Model for the Chromosphere/wind of 31 Cygni and Its Implications for Single Stars
I develop a detailed empirical model for the chromosphere and wind of 31 Cyg based on a previously published analysis of IUE spectra from the 1993 eclipse and on the thermodynamics of how the wind must be driven. I then use this model to interpret observations of single supergiant stars and to assess the evidence that their winds are fundamentally different from those of supergiants in the bina...
متن کاملDiscovery of water vapour in the carbon star V Cygni from observations with Herschel/HIFI*
D. A. Neufeld1, E. González-Alfonso2, G. Melnick3, M. Pułecka4, M. Schmidt4, R. Szczerba4, V. Bujarrabal5, J. Alcolea6, J. Cernicharo7, L. Decin8,9, C. Dominik9,15, K. Justtanont10, A. de Koter9,16, A. P. Marston11, K. Menten12, H. Olofsson10,13, P. Planesas5,14, F. L. Schöier10, D. Teyssier11, L. B. F. M. Waters9,8, K. Edwards17, C. McCoey17, R. Shipman18, W. Jellema18, T. de Graauw19, V. Osse...
متن کاملA Comprehensive Model for Stiffness Coefficients in V-Shaped Cantilevers
During past decade the AFM based nanomanipulation has been focus of attention as the promising nano fabrication approach. The main challenge in this process is the real-time monitoring. Consequently, the dynamic models have been proposed as a solution to the existing challenge. In the modeling approach the magnitudes of the forces are proportional to the stiffness coefficients o...
متن کاملAn Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Symposium - International Astronomical Union
سال: 1978
ISSN: 0074-1809
DOI: 10.1017/s0074180900143281